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ShenZhen QingFengYuan Technology Co.,Ltd.

MNS1N6627US

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Description: DIODE GP 440V 1.75A SQ-MELF B

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إبراز:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
2 µA @ 440 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.35 V @ 2 A
Package:
Bulk
Series:
Military, MIL-PRF-19500/590
Capacitance @ Vr, F:
40pF @ 10V, 1MHz
Supplier Device Package:
B, SQ-MELF
Reverse Recovery Time (trr):
45 ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 150°C
Package / Case:
SQ-MELF, B
Voltage - DC Reverse (Vr) (Max):
440 V
Current - Average Rectified (Io):
1.75A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
2 µA @ 440 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.35 V @ 2 A
Package:
Bulk
Series:
Military, MIL-PRF-19500/590
Capacitance @ Vr, F:
40pF @ 10V, 1MHz
Supplier Device Package:
B, SQ-MELF
Reverse Recovery Time (trr):
45 ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 150°C
Package / Case:
SQ-MELF, B
Voltage - DC Reverse (Vr) (Max):
440 V
Current - Average Rectified (Io):
1.75A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
MNS1N6627US
الديود 440 V 1.75A سطح الصعود B، SQ-MELF