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Description: DIODE SILICON CARBIDE 650V 8A
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes |
Product Status: |
Not For New Designs |
Current - Reverse Leakage @ Vr: |
40 µA @ 650 V |
Mounting Type: |
Through Hole |
Voltage - Forward (Vf) (Max) @ If: |
1.5 V @ 8 A |
Package: |
Tube |
Series: |
- |
Capacitance @ Vr, F: |
400pF @ 1V, 1MHz |
Reverse Recovery Time (trr): |
0 ns |
Mfr: |
Rohm Semiconductor |
Technology: |
SiC (Silicon Carbide) Schottky |
Operating Temperature - Junction: |
175°C (Max) |
Package / Case: |
TO-220-2 |
Voltage - DC Reverse (Vr) (Max): |
650 V |
Current - Average Rectified (Io): |
8A |
Speed: |
No Recovery Time > 500mA (Io) |
Base Product Number: |
SCS308 |
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes |
Product Status: |
Not For New Designs |
Current - Reverse Leakage @ Vr: |
40 µA @ 650 V |
Mounting Type: |
Through Hole |
Voltage - Forward (Vf) (Max) @ If: |
1.5 V @ 8 A |
Package: |
Tube |
Series: |
- |
Capacitance @ Vr, F: |
400pF @ 1V, 1MHz |
Reverse Recovery Time (trr): |
0 ns |
Mfr: |
Rohm Semiconductor |
Technology: |
SiC (Silicon Carbide) Schottky |
Operating Temperature - Junction: |
175°C (Max) |
Package / Case: |
TO-220-2 |
Voltage - DC Reverse (Vr) (Max): |
650 V |
Current - Average Rectified (Io): |
8A |
Speed: |
No Recovery Time > 500mA (Io) |
Base Product Number: |
SCS308 |
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