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ShenZhen QingFengYuan Technology Co.,Ltd.

IDWD20G120C5XKSA1

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Description: DIODE SIL CARB 1.2KV 62A TO247-2

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إبراز:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
166 µA @ 1200 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.65 V @ 20 A
Package:
Tube
Series:
CoolSiC™+
Capacitance @ Vr, F:
1368pF @ 1V, 1MHz
Supplier Device Package:
PG-TO247-2
Reverse Recovery Time (trr):
0 ns
Mfr:
Infineon Technologies
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-247-2
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
62A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
IDWD20
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
166 µA @ 1200 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.65 V @ 20 A
Package:
Tube
Series:
CoolSiC™+
Capacitance @ Vr, F:
1368pF @ 1V, 1MHz
Supplier Device Package:
PG-TO247-2
Reverse Recovery Time (trr):
0 ns
Mfr:
Infineon Technologies
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-247-2
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
62A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
IDWD20
IDWD20G120C5XKSA1
الديود 1200 V 62A من خلال الثقب PG-TO247-2